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| HGTG15N120C3D May 1997 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The diode used in anti-Parallel with the IGBT is the same as the RHRP15120. The IGBT was formerly development type TA49145. Features * 35A, 1200V at TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . 350ns * Short Circuit Rating * Low Conduction Loss Ordering Information PART NUMBER HGTG15N120C3D PACKAGE TO-247 BRAND 15N120C3D NOTE: When ordering, use the entire part number. Formerly Developmental Type TA49133. Symbol C G E Packaging JEDEC STYLE TO-247 E C G COLLECTOR (FLANGE) INTERSIL CORPRATION's IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 4267.1 1 HGTG15N120C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG15N120C3D 1200 35 15 120 20 30 15A at 1200V 164 1.32 -55 to 150 260 6 25 UNITS V A A A V V W W/oC oC oC s s Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = BVCES IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 4.0 VCE(PK) = 960V VCE(PK) = 1200V 40 15 TYP 2.3 2.4 5.6 MAX 250 3.0 3.5 3.2 7.5 100 UNITS V A mA V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 10 VGE = 15V L = 1mH Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON EOFF VEC trr RJC IC = IC110, VCE = 0.5 BVCES IC = IC110, VGE = 15V VCE = 0.5 BVCES VGE = 20V TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 10, L = 1mH - 8.8 75 100 17 25 470 350 2100 4700 - 100 130 550 400 3.2 65 75 0.76 1.5 V nC nC ns ns ns ns J J V ns ns oC/W oC/W Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time IEC = 15A IEC = 1A, dIEC/dt = 200A/s IEC = 15A, dIEC/dt = 200A/s IGBT Diode - Thermal Resistance NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG15N120C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn Energy loss (EON) includes losses due to the diode recovery. 2 HGTG15N120C3D Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 100 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 80 TC = -55oC Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 80 DUTY CYCLE <0.5%, TC = 25oC PULSE DURATION = 250s VGE = 15V 12V 10V 9V 8.5V 8V 60 60 40 TC = 150oC 40 20 TC = 25oC 20 0 6 8 10 12 14 0 0 2 4 6 8 10 VGE , GATE TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 25 100 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V TC = 25oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = 25oC 20 80 15 TC = 150oC 10 60 TC = 150oC 40 5 20 0 0 2 4 8 6 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 10 0 0 4 2 6 8 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 10 FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3 HGTG15N120C3D Typical Performance Curves 35 VGE = 15V ICE , DC COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 25 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) 30 ISC 125 25 100 20 75 15 tSC 50 50 75 100 125 150 10 10 25 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) TC , CASE TEMPERATURE (oC) FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 100 td(ON)I , TURN-ON DELAY TIME (ns) TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V 600 td(OFF)I , TURN-OFF DELAY TIME (ns) 500 400 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V 50 VGE = 10V 30 VGE = 10V or 15V 300 200 20 VGE = 15V 10 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) 100 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 4 ISC , PEAK SHORT CIRCUIT CURRENT (A) 35 VCE = 720V, RGE = 25, TJ = 125oC 150 HGTG15N120C3D Typical Performance Curves 300 Unless Otherwise Specified (Continued) TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V VGE = 10V 500 400 TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V VGE = 10V VGE = 15V trI , TURN-ON RISE TIME (ns) 100 tfI , FALL TIME (ns) 300 VGE = 15V 10 200 1 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) 100 5 10 15 25 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 30 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 10 EON , TURN-ON ENERGY LOSS (mJ) EOFF, TURN-OFF ENERGY LOSS (mJ) TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V 16 14 12 10 8 6 4 2 0 TJ = 150oC, RG = 10, L = 1mH, VCE(PK) = 960V 8 VGE = 10V 6 VGE = 10V VGE = 15V 4 2 VGE = 15V 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 5 HGTG15N120C3D Typical Performance Curves 100 fMAX , OPERATING FREQUENCY (kHz) Unless Otherwise Specified 50 (Continued) TJ = 150oC, VGE = 15V, RG = 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 40 30 20 10 VGE = 10V fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) 1 5 RJC = 0.76oC/W, SEE NOTES 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 15V 30 20 10 0 0 200 400 600 800 1000 1200 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 4000 FREQUENCY = 1MHz 3500 C, CAPACITANCE (pF) 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 25 CRES COES CIES FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA 16 VGE, GATE TO EMITTER VOLTAGE (V) 14 12 IG(REF) = 4.21mA, RL = 80, TC = 25oC VCE = 1200V 10 8 6 VCE = 800V 4 2 0 0 20 40 80 120 60 100 Qg , GATE CHARGE (nC) 140 160 180 VCE = 400V FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORM ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 PD t1 10-2 0.01 SINGLE PULSE t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 6 HGTG15N120C3D Typical Performance Curves 200 100 IF, FORWARD CURRENT (A) t, RECOVERY TIMES (ns) Unless Otherwise Specified (Continued) 70 60 50 trr 40 30 20 10 0 0 1 2 3 4 5 VF, FORWARD VOLTAGE (V) 6 7 0.5 1 tA di/dt = 200A/s 150oC 25oC -55oC 10 tB 1 0.5 2 5 IF, FORWARD CURRENT (A) 10 15 FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT Test Circuit and Waveform 90% L = 1mH RHRP15120 VGE EOFF RG = 10 + VDD = 960V ICE 10% td(OFF)I tfI trI td(ON)I VCE 90% 10% EON FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 7 Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc. Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 8 HGTG15N120C3D TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE E A OS Q OR D TERM. 4 OP INCHES SYMBOL A b b1 b2 c D MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625 MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 - L1 L b1 b2 c b 1 2 3 J1 3 2 1 E e e1 J1 L L1 OP Q 0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270 5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85 e e1 BACK VIEW LEAD 1 LEAD 2 LEAD 3 TERM. 4 - GATE - COLLECTOR - EMITTER - COLLECTOR OR OS NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 9 |
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